WebThe key focus areas of my industrial career have been: (i) identification & critical evaluation of new process/device designs, (ii) resolving key … Webresizable output stage [ISPSD 2006], a superjunction power FinFET [IEDM 2010], and a series of smart gate driver integrated circuits for Insulated Gate ipolar Transistors (IG Ts) and Gallium Nitride (GaN) power transistors. urrently, Prof. Ng’s group is …

Samsung’s 14nm FinFET Process Technology ... - Samsung …

Web22 dec. 2024 · Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach Runsheng Wang 1* , Zixuan Sun 1 , Yue-Yang Liu 2 , Zhuoqing Yu 1 , Zirui Wang 1 , Xiangwei Jiang 2 , Ru Huang 1 WebIEEE IEDM 12 janvier 2016 22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications. This platform achieves the power and performance efficiency of a 16/14nm FinFET technology in a cost effective, planar device architecture that can be implemented with … countryman water

2016 IEEE International Electron Devices Meeting (IEDM 2016)

Web11 dec. 2002 · These MOSFETs are believed to be the smallest double-gate transistors ever fabricated. Excellent short-channel performance is observed in devices with a wide range … Web, A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1/spl mu/m/sup 2/SRAM cell, in: IEEE Digest International Electron Devices Meeting (IEDM), 2002, pp. 61 – 64. Google Scholar [11] Marella S.K., Sapatnekar S.S. Web18 dec. 2014 · IEDM – Monday was FinFET Day. In my conference preview blog last week, I mentioned that session 3 on the Monday afternoon would be a hot session, with three finFET papers, by TSMC, Intel, and IBM. I was right – even though they were given in the Grand Ballroom, it was full. Paper 3.1 from TSMC disclosed what looks like their 16FF+ … brewer animal emergency clinic